Dresden 2011 – scientific programme
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DS: Fachverband Dünne Schichten
DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films
DS 42.95: Poster
Wednesday, March 16, 2011, 15:00–17:30, P1
(contribution withdrawn) Anisotropic structural and electrical properties of strained SrTiO3 films on sapphire — •Thomas Grellmann, Kyrylo Greben, Eugen Hollmann, Rolf Kutzner, and Roger Wördenweber — Institute of Bio- and Nanosystems (IBN), Forschungszentrum Jülich, D-52425 Jülich
The electronic properties of oxide films strongly depend on the composition, structure and structural imperfections. Since lattice constants and thermal expansion coefficient of substrate and films are usually different, mechanical strain is imposed on the growing films. In this work we examine the strain of epitaxially grown SrTiO3 films on sapphire and its impact on the ferroelectric properties of the film. The lattice mismatch of about 10% between SrTiO3 and sapphire is reduced via a buffer layer, CeO2. The strain induced modification of the structure is determined via XRD measurements. High-resolution Pole-figure measurements demonstrate the anisotropic and thickness dependent (i.e., relaxation) distortion of the SrTiO3 lattice. Electronic characterization of the dielectric properties reveal the resulting anisotropy of the polarizability of film. Furthermore, it demonstrates that ferroelectric can be induced via strain in the originally incipient ferroelectric SrTiO3 up to high temperatures well above 200K.