Dresden 2011 – scientific programme

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DS: Fachverband Dünne Schichten

DS 42: Poster I: Progress in Micro- and Nanopatterning: Techniques and Applications (jointly with O); Spins in Organic Materials; Ion Interactions with Nano Scale Materials; Organic Electronics and Photovoltaics; Plasmonics and Nanophotonics (jointly with HL and O); High-k and Low-k Dielectrics (jointly with DF); Organic Thin Films; Nanoengineered Thin Films; Layer Deposition Processes; Layer Properties: Electrical, Optical, and Mechanical Properties; Thin Film Characterisation: Structure Analysis and Composition; Application of Thin Films

DS 42.99: Poster

Wednesday, March 16, 2011, 15:00–17:30, P1

Picosecond-Pulsed Laser Deposition of LaAlO₃ — •Erik Thelander and Bernd Rauschenbach — Leibniz Institute of Surface Modification, Leipzig

The perovskite material LaAlO₃ is a dielectric with a permittivity of around 25 and a beneficial conduction band offset towards Si. Therefore it is an interesting candidate to be used as the next generation gate oxide in CMOS technology if it ever were to be grown epitaxially on Si. Here we present findings made on thin films of LaAlO₃, synthesized with a Pulsed Laser Deposition (PLD) process using ultrashort laser pulses, deposited both on Si and lattice matched SrTiO₃. Using suitable filtering techniques, we show that it is possible to avoid the incorporation of nanoparticles in the growing films which is normally a most troublesome feature of ultrashort PLD [1,2]. Film topography has been investigated with SEM and AFM, which show low particle density and smooth surfaces with RMS-values between 0.3 and 1 nm. XRD and XPS have been used to obtain structural information of the samples whereas TOF-SIMS have been employed to gain information about the diffusion in the interface as well as the elemental distribution within the films.
Teghil et al., Appl. Surf. Sci., 210 (2003), 307
Amoruso et al., Appl. Phys. Lett., 84 (2004), 4502