Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 43: Poster II: Thin Film Chalcogenide Photovoltaics; Thermoelectric Materials, Thin Films, and Nanostructures

DS 43.14: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P2

In-plane transport of artificially structured CVD ZnO/ZnO:Ga and ZnS/ZnO:Ga barstructures with different interface design — •Gert Homm, Steve Petznick, Sebastian Eisermann, Torsten Henning, Martin Eickhoff, Bruno K. Meyer, and Peter J. Klar — I. Physikalisches Institut, Justus-Liebig Universität, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

Series of different bar-shaped samples consisting of lateral arrangements of either alternating ZnO:Ga and ZnO stripes or ZnO:Ga and ZnS stripes were fabricated from rf-sputtered layers or epitaxial layers. Photolithography techniques and wet-chemical or ion-beam etching followed by a second sputtering process were used to transfer the pattern. The bar-shaped structures have dimensions of a few micrometers and are oriented parallel to the applied temperature gradient and thus to the transport direction. The structure of the interfaces is varied to create controlled interface roughnesses. This enables one to gain information about the extension of the interface region and the transport mechanisms along the interfaces by measuring the Seebeck coefficient and the electrical conductivity of series of samples with different interface structures.