Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 43: Poster II: Thin Film Chalcogenide Photovoltaics; Thermoelectric Materials, Thin Films, and Nanostructures

DS 43.5: Poster

Mittwoch, 16. März 2011, 15:00–17:30, P2

Nb Substitution in Zr0.5Hf0.5NiSn based Compounds. — •Schwall Michael and Benjamin Balke — Johannes-Gutenberg University Mainz

This work reports about the structural and physical properties of the Heusler alloy (Zr0.5Hf0.5)1-xNbxNiSn with varying Nb concentration. The structure of the(Zr0.5Hf0.5)1-xNbxNiSn solid solution was investigated by means of X-ray diffraction. It is found that the alloys exhibit the C1b structure for all Nb concentration. The physical properties were studied using the PPMS from low temperature to room temperature. It was shown that the thermoelectric properties like the dimensionless Figure of Merit is increased 5 times by substituting(Zr0.5Hf0.5) with Nb to 0.09 at 300 K and the Powerfactor is increased 10 times to 1.8 mW/K2m at 300K.