Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 45: Ion Interactions with Nano Scale Materials I (Focused Session -- Organisers: Diesing, Facsko)
DS 45.5: Vortrag
Donnerstag, 17. März 2011, 12:15–12:30, GER 37
Monitoring particle and photo induced electronic excitations by metal–insulator–semiconductor devices — •Kevin Stella1, Domocos A. Kovacs1, Wolfgang Brezna2, Jürgen Smoliner1, and Detlef Diesing1 — 1Fakultät für Chemie, Universität Duisburg-Essen, D-45117 Essen, Germany — 2Institut für Festkörperelektronik, TU Wien, A-1040 Wien, Austria
Excited charge carriers in and on thin metal-insulator-semiconductor devices (MIS) are released either by internal photoemission or by exposing the device surface with argon ions. Photons (visible and near infrared) penetrate all three layers of the MIS device and excite carriers in the semiconductor as well as in the metal. Excited carriers by low energy argon ions (Ekin = 200 eV) are released only in the first atomic layers of the top metal film. Photon induced carrier transport shows a strong bias dependence with saturation values of up to 0.1 for the photoyield in reverse bias. The voltage necessary for reaching the saturation value is a clear function of the interstitial oxide layers thickness. With forward bias the photoyield decreases to 10−4. Ion induced carrier transport exhibits an opposed bias dependence with a suppression of the signal in reverse biasing.