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DS: Fachverband Dünne Schichten

DS 48: Ion Interactions with Nano Scale Materials III (Focused Session -- Organisers: Diesing, Facsko)

DS 48.1: Topical Talk

Donnerstag, 17. März 2011, 16:00–16:30, GER 37

Ion beam doping of semiconductor nanowires — •Carsten Ronning — Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena

Semiconductor nanowires are of major importance within the area of nanotechnology, and are usually synthesized using the so-called vapor-liquid-solid (VLS) mechanism. Controlled doping, a necessary issue in order to realize device applications, is an unsolved problem and an extremely difficult task if using such a growth mechanism. We use an alternative route for modifying the electrical, optical and magnetic properties of semiconductor nanowires: low-energy ion implantation within the keV range. The structural impact to the nanowires was investigated, and several effects due to the fact the ion range matches the diameter of the nanostructures had to be considered. A new simulation tool was therefore developed. This together with several independent studies on optical and electrical doping of semiconductor nanowires will be presented.