Dresden 2011 – scientific programme

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DS: Fachverband Dünne Schichten

DS 50: Organic Electronics and Photovoltaics I (jointly with CPP, HL, and O)

DS 50.2: Talk

Thursday, March 17, 2011, 10:30–10:45, GER 38

Investigation of the origin of the memory effect in devices based on C₆₀ — •Philipp Sebastian, Alexander Zakhidov, Björn Lüssem, and Karl Leo — Institut für Angewandte Photophysik, George-Bähr-Straße 1, 01069 Dresden, Germany

Besides their application in organic solar cells and organic light emitting diodes, organic semiconductors also show much potential in the field of flexible and lightweight electronics, such as organic memory. In particular, the development of organic memory devices has turned out to be challenging. So far, many different approaches for organic memory devices have been reported in literature [1].

In this contribution, we report on an organic memory device comprising SiO₂ layer on top of a indium tin (ITO) ground contact, followed by electron accepting C₆₀ layer, a n-doped (Cs) 4,7-diphenyl-1,10-phenanthroline (BPhen) layer and an Al top electrode. IV measurements reveal a reproducible hysteresis of our devices with a maximum ON-OFF ratio of about one order of magnitude. The memory devices also demonstrate a remarkable switching cycle durability of more than 10⁴ successfully applied write read erase read cycles, whereas the ON-OFF ratio remains constant at about 10. Retention times of several weeks underline a reasonable non-volatility. Further, the memory mechanism has been investigated by impedance spectroscopy. A hysteresis in capacitance-voltage measurements expresses the accumulation of electrons in the C₆₀ and at the interface to the SiO₂ layer.

[1] J. Scott, L. Bozano, Advanced Materials 19, 1452 (2007)