Dresden 2011 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 51: Organic Electronics and Photovoltaics II (jointly with CPP, HL, and O)
DS 51.4: Talk
Thursday, March 17, 2011, 12:45–13:00, GER 38
Influence of sample geometry and contact metal on the characterictics of organic field-effect transistors — •Dominik Klaus, Christopher Keil, Jan Hartel, and Derck Schlettwein — Institute of Applied Physics, Justus-Liebig-University Giessen, Germany. email:schlettwein@uni-giessen.de
Thin films of F16PcCu were prepared by physical vapor deposition on µ-structured electrode arrays of different contact metals. I/V-measurements of structures with various channel lengths showed a nonlinear injection of charge carriers for low Source-Drain-Voltages VDS. Such behavior was especially found for µ-structures of small channel length indicating an influence of the contact behavior at the interface between metal electrode and organic semiconductor channel. A model was developed based on different aspects of an injection barrier, channel resistance and a parameter characterizing the geometry of the conducting channel which were separately used in the literature before. The model was used to determine the charge carrier mobility also for low values of VDS and consistent values with those from typically evaluated large VDS in the saturation regime were obtained. Implications for technical applicability of such transistors and general validity of such model are discussed.