Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 54: Nanoengineered Thin Films
DS 54.2: Vortrag
Donnerstag, 17. März 2011, 18:15–18:30, GER 38
Glancing angle deposited Ge nanorod arrays on Si patterns — •Chinmay Khare1, Jens Bauer1, Bodo Fuhrmann2, Hartmut S Leipner2, and Bernd Rauschenbach1 — 1Leibniz Institute of Surface Modification, Permoserstraße 15, 04318 Leipzig, Germany — 2Interdisciplinary Centre of Materials Science, Martin-Luther-University Halle-Wittenberg, Heinrich-Damerow-Straße 4, 06120 Halle, Germany
A strong dominance of the shadowing mechanism facilitates growth of highly porous films by a physical vapour deposition technique, glancing angle deposition (GLAD). Under shadowing condition, an oblique particle flux incidence at the substrate with an angle β (usually β>80°, as measured to the substrate normal) enables realization of columnar thin films, which can be sculpted into manifold of structures. Here, ion beam sputter glancing angle deposition of Ge nanorod arrays on customized Si patterns fabricated with a combinational approach of nanospehere lithography and reactive ion etching are presented. The effective morphological variations in shape and dimension of GLAD-grown nanorods on hexagonal-closed-packed (hcp) arrays and honeycomb-like arrays are strongly influenced by Si seed heights and inter-seed distances. The nanorod growth optimization could be realized through alterations in the Si seed widths (ws) and inter-seed distances Rs, enabling growth of individual nanorods on each Si pattern seed. Furthermore, with this promising method Si/Ge heterojunction GLAD-nanostructures could be realized with alternating material supply for potential application in a thermoelectric module.