Dresden 2011 – scientific programme
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DS: Fachverband Dünne Schichten
DS 55: Focused Session: Novel Green Laser Diodes (jointly with HL and O)
DS 55.2: Invited Talk
Thursday, March 17, 2011, 15:00–15:30, POT 51
Room-temperature CW operation of BeZnCdSe green laser diode — •shigehisa tanaka1, jun-ichi kasai2, sumiko fujisaki1, ryouichi akimoto2, takeshi kikawa1, shinji tsuji1, haruhiko kuwatsuka2, toshifumi hasama2, and hiroshi ishikawa2 — 1Hitachi Central Research Laboratory, Kokubunji-shi, Tokyo, Japan — 2National Institute of Advanced Industrial Science and Technologies, Tsukuba-shi, Ibaraki, Japan
Recently, green laser diodes have been received much attention because they enable novel devices such as micro-projectors or vivid color displays when used in combination with red and blue laser diodes. Although several approaches using III-nitride-based semiconductors and their successful laser operations with wavelength of over 500 nm have already been reported, their threshold currents still increase as their lasing wavelengths approach to the pure green region. ZnSe based compound semiconductors are also promising materials for the green laser diodes. In particular, Be containing ZnSe based mixed crystals are expected to overcome the problem of limited lifetime of II-VI-based laser diodes.
In this study, a room temperature continuous-wave operation at 545 nm was demonstrated with a BeZnCdSe quantum-well laser diode. Its threshold current density was as low as 1.7 kA/cm2. This result indicates this material system is advantageous in realizing a green laser diode with low power consumption.