Dresden 2011 – scientific programme

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DS: Fachverband Dünne Schichten

DS 60: Thermoelectric Materials, Thin Films, and Nanostructures II (Focused Session -- Organisers: Nielsch, Rastelli, Balke)

DS 60.4: Talk

Friday, March 18, 2011, 14:45–15:00, GER 37

Half Heusler thin film superlattices — •Tino Jaeger¹, Christian Mix¹, Michael Schwall², Benjamin Balke², Sascha Populoh³, Anke Weidenkaff³, Claudia Felser², and Gerhard Jakob¹ — ¹Institut für Physik, Universität Mainz, Staudinger Weg 7, 55128 Mainz, Germany — ²Institut für Anorganische Chemie und Analytische Chemie, Universität Mainz, Staudinger Weg 9, 55128 Mainz, Germany — ³EMPA -Eidgenössische Materialprüfung und -forschungsanstalt, Festkörperchemie und Katalyse, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland

Due to rising energy costs and carbon dioxide concentration in the atmosphere thermoelectric materials have moved into focus. Recently, the efficiency of thermoelectric materials is to be increased by nanostructuring. So, Seebeck coefficient and electrical conductivity are increased or/and thermal conductivity is reduced. Here, DC magnetron sputtering is used for epitaxial deposition of thin films containing Half-Heuslers. As bulk materials, TiNiSn and Zr_0.5Hf_0.5NiSn exhibit promising thermoelectric properties. It is shown that TiNiSn and Zr_0.5Hf_0.5NiSn are suitable to be epitaxially deposited on top of each other. Therefore, both Half-Heusler materials can be used for superlattice structures to decrease the thermal conductivity perpendicular to the surface. The relation between crystal quality and in-plane thermoelectric properties is been shown.