Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 60: Thermoelectric Materials, Thin Films, and Nanostructures II (Focused Session -- Organisers: Nielsch, Rastelli, Balke)
DS 60.5: Vortrag
Freitag, 18. März 2011, 15:00–15:15, GER 37
Investigations on the optimum Zr to Hf ratio in Zr1−xHfxNiSn as n-type thermoelectric materials — •Michael Schwall and Benjamin Balke — Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg - University, Mainz, Germany
Excellent XNiSn (X=Ti, Zr, Hf) n-type thermoelectric materials (ZTmax= 1.5) were reported from several groups in Asia and the USA. The best reported half-Heusler materials exhibit thereby always the same Zr to Hf ratio. Because of the demands on a thermoelectric converter (TEC) like environmental friendliness, low-cost and future availability of raw materials, we investigated the effect of varying the Zr to Hf ratio and the effect of Ti substitution on the X-position. The best Zr to Hf ratio was then substituted with the best Ti value. We will present the results of the thermal transport measurements, the structure analysis of the materials and outgoing from these results some ideas for further investigations to increase the ZT.