DS 60: Thermoelectric Materials, Thin Films, and Nanostructures II (Focused Session -- Organisers: Nielsch, Rastelli, Balke)
Friday, March 18, 2011, 14:00–15:45, GER 37
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14:00 |
DS 60.1 |
Harman measurements on laser-annealed thin films of Si and Ge nanoparticles — •Benedikt Stoib, Martin S. Brandt, Nils Petermann, Hartmut Wiggers, and Martin Stutzmann
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14:15 |
DS 60.2 |
3ω measurements of half-Heusler thin films using a passive circuit — •Christian Mix, Tino Jäger, and Gerhard Jakob
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14:30 |
DS 60.3 |
Cross-plane thermal conductivity of Ge/Si multilayers — •Peixuan Chen, Jianjun Zhang, Fabio Pezzoli, Mathieu Stoffel, Christoph Deneke, Armando Rastelli, and Oliver Schmidt
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14:45 |
DS 60.4 |
Half Heusler thin film superlattices — •Tino Jaeger, Christian Mix, Michael Schwall, Benjamin Balke, Sascha Populoh, Anke Weidenkaff, Claudia Felser, and Gerhard Jakob
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15:00 |
DS 60.5 |
Investigations on the optimum Zr to Hf ratio in Zr1−xHfxNiSn as n-type thermoelectric materials — •Michael Schwall and Benjamin Balke
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15:15 |
DS 60.6 |
Electronic structure and thermoelectric properties of doped Heusler compounds CoTi1−xMxSb(M = Sc,V) — •S. Ouardi, G. H. Fecher, B. Balke, X. Kozina, M. Schwall, G. Stryganyuk, S. Ueda, K. Kobayashi, and C. Felser
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15:30 |
DS 60.7 |
Electronic structure and thermoelectric properties of doped Heusler compounds. — •G. H. Fecher, S. Ouardi, and C. Felser
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