Dresden 2011 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 63: Organic Thin Films II

DS 63.1: Vortrag

Freitag, 18. März 2011, 12:00–12:15, GER 38

Investigation of contact resistance in organic thin film transistors by channel potential mapping — •Marko Marinkovic, Sidhant Bom, Dietmar Knipp, and Veit Wagner — School of Engineering and Science, Jacobs University Bremen, Campus Ring 1, 28759 Bremen, Germany

One of the limiting factors for the commercial use of organic electronics is the limitation in high switching frequencies due to the contact resistance [1]. In this study, we investigate the contact resistance by measuring the potential distribution inside of the channel of transistors by additional buried sense electrodes. This allows the separate determination of the potential barriers at the source and drain electrode, that can be related directly to the injection and extraction of the majority carrier.

For this purpose, organic thin film transistors have been prepared on plastic (PET) substrates with P3HT as a p-type material and a similar n-type semiconductor in the top-gate bottom-contact configuration. The interface between the semiconductors and the metal electrode (Au) has been analyzed through current-voltage measurements, showing the contact resistance of less than 200 kΩcm and 300 kΩcm at source and drain electrical contacts, respectively. These results show good agreement with the transmission line method (TLM).

[1] V. Wagner et al. Appl. Phys. Lett. 89 (2006) 243515.