Dresden 2011 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 66: Organic Electronics and Photovoltaics O-I (jointly with CPP, HL, and O)
DS 66.2: Vortrag
Freitag, 18. März 2011, 11:30–11:45, WIL B122
Smooth growth of organic semiconductor films on graphene for high efficiency electronics — •Gregor Hlawacek1,2, Fawad S. Khokhar1, Raoul van Gastel1, Bene Poelsema1, and Christian Teichert2 — 1Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, NL-7500AE, Enschede, The Netherlands — 2Institute for Physics, University of Leoben, Franz Josef Str. 18, A-8700 Leoben, Austria
High quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule para-sexiphenyl on the transparent electrode material graphene. State of the art Low Energy Electron Microscopy, micro Low Energy Electron Diffraction and spot profile analysis techniques revealed the morphological and structural evolution of the thin film. Subtle difference in the molecular arrangement in comparison to graphite are confirmed by molecular dynamics simulations. Initial islands are found to have a meta stable structure that is characterized by flat lying molecules. With increasing coverage this structure changes into a herringbone arrangement similar to the {111} bulk layer. The layer-by-layer growth of 6P on graphene proceeds by subsequent adding of {111} layers.