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Dresden 2011 – scientific programme

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DS: Fachverband Dünne Schichten

DS 9: Thin Film Characterisation: Structure Analysis and Composition (XRD, TEM, XPS, SIMS, RBS, ...) II

DS 9.1: Talk

Monday, March 14, 2011, 12:00–12:15, GER 38

The interface of epitaxial bixbyite-structured rare-earth sesquioxides on Si(111) — •Michael Niehle, Tatsuro Watahiki, and Achim Trampert — Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin

Rare-earth oxides (RE2O3) are promising high-κ materials for replacement of SiO2 as insulator in CMOS technology. They are required for further downscaling. Recently, the possibility to grow single domain RE2O3 in the cubic bixbyite structure on Si(111) with atomically smooth, chemically stable and crystalline interfaces has been demonstrated by molecular beam epitaxy. Understanding the interface’s microstructure is necessary to optimize growth conditions and to estimate applicability in future devices. Binary Gd2O3 or an adequate ternary alloy like (La,Lu)2O3 allow for a nearly lattice matched epitaxial growth. High-resolution transmission electron microscopy (HRTEM) is used to demonstrate that a coherently grown heterostructure is feasable. Two models for the atomic configuration at the interface are proposed and incorporated in a supercell which serves as input for HRTEM image simulation applying the multi-slice algorithm. Results of the simulation are confirmed by comparison to experimental HRTEM-images of (La1−xLux)2O3 and (Gd1−xLux)2O3 with x ≈ 0.5 and x ≈ 0, respectively. Competing crystal structures to the bixbyite phase are excluded.

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