Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 11: Transport: mainly Theory
HL 11.4: Talk
Monday, March 14, 2011, 12:45–13:00, POT 51
Stochastic resonance in nanoelectronic devices — •Fabian Hartmann1, David Hartmann1, Peter Kowalzik1, Alfred Forchel1, Luca Gammaitoni2, and Lukas Worschech1 — 1Technische Physik, Physikalisches Institut, Universität Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany — 2NiPS Laboratory, Dipartimento di Fisica, Universita di Perugia, I-06123 Perugia, Italy, and Istituto Nazionale di Fisica Nucleare, Sezione di Perugia, I-06123 Perugia, Italy
Noise degrades the performance of any device. This simple statement is not true if principle associated with Stochastic Resonance (SR) comes into play. Here the output exhibits a maximum signal-to-noise ratio (SNR) for noise floors unequal to zero. The authors have fabricated submicron-sized nanoelectronic devices and tested the noise activated response in these bistable devices under weak periodic modulation. We demonstrate that the weak periodic input can be synchronized with an optimum amount of noise and thus the operation condition of SR is fulfilled.