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HL: Fachverband Halbleiterphysik

HL 12: Quantum Dots and Wires: Arsenides

HL 12.4: Vortrag

Montag, 14. März 2011, 12:45–13:00, POT 151

Impact of growth conditions on morphology, structure and electrical properties of MOVPE grown InAs nanowires — •A. Winden^1,3, M. von der Ahe^1,3, K. Sladek^1,3, S. Wirths^1,3, K. Weis^1,3, C. Blömers^1,3, C. Volk^1,3, F. Dorn^2,3, T. Weirich^2,3, T. Schäpers^1,3, H. Hardtdegen^1,3, and D. Grützmacher^1,3 — ¹Institute of Bio- and Nanosystems (IBN-1), Forschungszentrum Jülich, 52428 Jülich, Germany — ²GFE, Gemeinschaftslabor für Elektronenmikroskopie — ³JARA - Fundamentals of Future Information Technology

The bottom-up assembly of semiconductor nanowires holds promise for future nanoelectronic devices. The high room temperature carrier mobility and the narrow direct bandgap make InAs an eligible material for this application. However, as recently reported, the conductivity of InAs nanowires could be influenced detrimentally by crystal defects such as twin planes and stacking faults. In this contribution, we report on different strategies to affect the nanowire crystallographic structure. Growth is performed by selective area MOVPE on partially masked substrates. The influence of growth rate, substrate orientation and Si doping on morphological, structural and electrical properties was investigated by scanning and transmission electron microscopy and two-and four-terminal measurements. It is found that especially the growth rate reduces the stacking fault density. Furthermore we observe an increase of conductivity and a decrease of nanowire aspect ratio with higher doping concentration. A correlation between doping, growth rate and electrical characteristics will be presented.