Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 16: Microcavities

HL 16.4: Talk

Monday, March 14, 2011, 15:15–15:30, FOE Anorg

Site-controlled quantum dots in an electrically driven single-sided micropillar cavity — •Sebastian Maier, Christian Schneider, Alexander Huggenberger, Tobias Heindel, Stefan Heckelmann, Stephan Reitzenstein, Sven Höfling, Lukas Worschech, Martin Kamp, and Alfred Forchel — Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

Spatial control over the position of a single quantum dot is important for the realization of quantum optical and quantum electronic devices. We integrated site-controlled InAs quantum dots (SCQDs) in an electrically driven p-i-n diode by performing molecular beam epitaxial (MBE) growth on a pre-patterned substrate. The SCQDs are grown on a line of nanoholes fabricated with electron beam lithography and wet etching. We employed a low quality factor single-sided micropillar cavity design with diameters smaller than 2 µm that allows for directed and highly efficient light emission. The bottom (top) distributed Bragg reflector (DBR) consist of 24 p-doped (5 n-doped) pairs of quarter-wavelength thick layers of AlAs and GaAs. The SCQDs are centered in the intrinsic GaAs λ-cavity. Microelectroluminescence measurements of electrically driven SCQDs reveal emission from single SCQDs with narrow linewidths down to 170 µeV.