Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: Nitrides: Growth and Characterization
HL 17.2: Vortrag
Montag, 14. März 2011, 14:45–15:00, POT 51
Optical properties of inversion domain boundaries in GaN — •Thomas Kure1, Ronny Kirste1, Ramon Collazo2,3, Gordon Callsen1, Juan Sebastián Reparaz1, Anthony Rice2, Seji Mita3, Jinqiao Xie3, Zlatko Sitar2,3, and Axel Hoffmann1 — 1Technische Universität Berlin, Berlin, Germany — 2North Carolina State University, Raleigh, North Carolina, USA — 3HexaTech Inc., Raleigh, North Carolina, USA
Influenced by the growth method and growth parameters the polarity of epitaxial grown GaN films can be manipulated to form pure N- or Ga-polarity or states of mixed polarity. GaN grown on heterosubstrates can even form spatially adjacent areas of different polarities differentiated by an inversion domain boundary (IDB). Besides their structural differences each of the areas has unique optical properties, likewise the IDB itself. Furthermore, due to a polar selective doping behaviour, it is possible to fabricate a lateral p/n junction.
Using spatially-resolved photoluminescence spectroscopy (µ-PL) we revealed a temperature dependant enhancement of the luminescence by one order of magnitude at the IDB. Thereby, we confirmed an earlier published model [1]. Samples intentionally doped with Mg, which led to a p/n-junction, revealed an unexpected difference of the enhancement compared to the undoped samples. In addition, we used spatially-resolved electroluminescence spectroscopy (µ-EL) to investigate the influence of an external electric field. [1] V. Fiorentini, Applied Physics Letters 82, 1182 (2003)