Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 17: Nitrides: Growth and Characterization
HL 17.4: Vortrag
Montag, 14. März 2011, 15:15–15:30, POT 51
Growth and microstructure of GaN:Cu - a possible spinaligner for nitride-based spintronic — •Philipp R. Ganz1,2, Gerda Fischer3, Christoph Sürgers1,3, Huang Teng Hsing4, Liuwen Chang4, and Daniel M. Schaadt1,2 — 1DFG-Center for Functional Nanostructures, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — 2Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — 3Physikalisches Institut, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — 4Department of Materials and Optoelectronic Science / Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan, R. O. C.
Group-III nitride semiconductors are attractive for spintronic device applications due to the long and temperature independent spin-lifetime in InN quantum dots. For spin-injection into these quantum dots, spin-aligner which yields at room-temperature ferromagnetism and a high spin-polarization is essential. A possible candidate for a nitride-based spin-aligner is GaN:Cu, which exhibit ferromagnetic behavior far above room-temperature, although Cu is an intrinsic non-magnetic material. However, questions regarding the incorporation of Cu in GaN and the origin of the ferromagnetic behavior are still open. Bulk GaN:Cu samples were grown by plasma assisted MBE. We carried out a detailed study on the structural and magnetic properties from nitrogen- to Ga-rich conditions. Under Ga-rich conditions, the formation of Cu-Ga-islands on the surface was observed. The properties of these islands and the bulk material were studied by transmission electron microscopy.