Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 17: Nitrides: Growth and Characterization
HL 17.5: Talk
Monday, March 14, 2011, 15:45–16:00, POT 51
Defect Characterisation of GaN Based High Electron Mobility Transistors — •Sebastian Rönsch1, Michael Krieger1, Heiko Weber1, Giorgio Schweeger2, and Markus Sickmöller2 — 1Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg — 2AZZURRO Semiconductors AG, Magdeburg
GaN and related III-V semiconductors are promising materials for the application in high-power electronics. In particular, epitaxially grown AlGaN/GaN heterojunctions are excellent suited for the development of high-power transistors. The intrinsic material properties of AlGaN and GaN induce a two dimensional electron gas with high electron mobility at the interface of the heterojunction. For further improvement of the overall device performance, the heterojunction and its two dimensional electron gas was characterized by different measurement techniques. Hall measurements were performed to investigate the charge carrier concentration and the mobility of the two dimensional electron gas. The mobility of the charge carriers is limited due to electrically active defects within the band gap of GaN. In order to achieve a profound understanding of the defect mechanisms Deep Level Transient Spectroscopy (DLTS) was applied resulting in the defect parameters: activation energy, capture cross section and concentration. Additional Capacitance-Voltage (CV) measurements were carried out to verify the charge carrier concentration determined by the Hall measurements.