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HL: Fachverband Halbleiterphysik

HL 17: Nitrides: Growth and Characterization

HL 17.6: Talk

Monday, March 14, 2011, 16:00–16:15, POT 51

Band offsets in cubic GaN/AlN superlattices - Theory and Experiment — •Marc Landmann, Christian Mietze, Eva Rauls, Klaus Lischka, Donat J. As, and Wolf Gero Schmidt — Universität Paderborn, Germany

The presently unknown band offset in non-polar cubic GaN/AlN superlattices has been investigated by intersubband and interband spectroscopy as well as ab-initio calculations [1]. On the one hand, the conduction band offset has been determined from the comparison of the measured transition energies with model calculations within the effective mass approximation. On the other hand, the valence and conduction band offset has been accurately simulated by calculating many body corrections within the GW approximation on top of hybrid-functional density functional theory (DFT) calculations. A conduction band offset of (1.4±0.1) eV and a valence band offset of (0.5±0.1) eV has been thus obtained as a result of both approaches.

[1] C. Mietze, M. Landmann, E. Rauls, M. Tchernycheva, F.H. Julien, W. G. Schmidt, K. Lischka and D. J. As (submitted to Phys. Rev. B, 2010).