Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 17: Nitrides: Growth and Characterization
HL 17.7: Talk
Monday, March 14, 2011, 16:15–16:30, POT 51
Second- and third-harmonic generation in periodically polarity-inverted GaN wave guides — •Stefan Krischok1, Sindy Hauguth-Frank1, Pierre Lorenz1, Vadim Lebedev2, Oliver Ambacher2, Rüdiger Goldhahn3, Björn Braunschweig4, Gerhard Lilienkamp4, and Winfried Daum4 — 1Inst. für Mikro- und Nanotechnologien, TU Ilmenau — 2Fraunhofer IAF, Freiburg — 3Inst. für Exp. Physik, OvG Universität Magdeburg — 4Inst. für Energieforschung und Phys. Technologien, TU Clausthal
Quasi-phase matching has proven as promising technique for efficient second- and third-harmonic generation (SHG and THG). For hexagonal GaN the spatial modulation of the nonlinear coefficients can be achieved by a periodic polarity inversion, which was realized by etching periodic stripes into an AlN nucleation layer on sapphire substrates followed by GaN overgrowth by molecular beam epitaxy leading to either Ga- or N-face films with sharp inversion domain boundaries. The nonlinear frequency conversion was studied by an amplified Ti:sapphire laser system pumping an optical parametric amplifier to provide continuous tuning of the fundamental wave length between 1000 and 1600 nm. For a structure with 5.36 µm periodicity, quasi-phase-matched SHG was observed at 1070 nm which is consistent with expectation based on the ordinary and extraordinary refractive indices obtained by ellipsometry. In addition, quasi-phase-matched THG is detected at 1217, 1313, and 1452 nm. A detailed interpretation of these data as well as results of the structural and optical characterization of the N- and Ga-face layers will be presented.