Dresden 2011 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 19: Silicon and Germanium
HL 19.10: Vortrag
Montag, 14. März 2011, 17:00–17:15, POT 251
Raman scattering study of ro-vibrational modes of interstitial H2 in crystalline Si — •Sandro Koch, Edward Lavrov, and Jörg Weber — Technische Universität Dresden, 01062 Dresden, Germany
Raman scattering studies of Si samples hydrogenated in a rf plasma have been performed. Ro-vibrational Q(J) transitions for rotational quantum number J=0,1,2, and 3 have been investigated in the temperature range from 90 to 388 K. We demonstrate that the Q(2) transition appears in the Raman spectra above 200 K as suggested by Hiller et al. [PRB 74, 235214 (2006)]. Additionally, the Q(3) transition is detected at 388 K. From the temperature dependence of the phonon spectrum of the Si host, we can show that the coupling between rotational states of H2 depends on the temperature.