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HL: Fachverband Halbleiterphysik

HL 19: Silicon and Germanium

HL 19.3: Talk

Monday, March 14, 2011, 15:00–15:15, POT 251

Structure characterization on selective Ge CVD-heteroepitaxy on free standing Si (001) nanopatterns — •Grzegorz Kozlowski, Peter Zaumseil, Yuji Yamamoto, Joachim Bauer, Bernd Tillack, and Thomas Schroeder — IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

Ge is attracting increasing interest to build up future photonic technologies. The main reasons for choosing Ge is given by its superior optoelectronic properties with respect to Si and its compatibility with Si CMOS processing in contrast to III-V materials. The major stumble block for the integration of high quality Ge films on Si is however given by the 4.2% lattice mismatch which causes misfit and threading dislocations (TD). It is known that Ge deposited in smaller window tends to show lower TD density. We focus our work on the growth studies of selective Ge heteroepitaxy on nanopatterned Si (001) wafers with SiO₂ mask. Synchrotron-based grazing incidence X-ray diffraction is applied to study the structure, defect and strain characteristics with high resolution and sensitivity in a non-destructive way. In addition, special focus is devoted by Raman, transmission electron microscopy (TEM) and finite element method (FEM) simulation to determine the influence of SiO₂ growth masks on the quality of a) patterned Si substrates and b) the overgrowing Ge epilayers.