Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 19: Silicon and Germanium
HL 19.4: Vortrag
Montag, 14. März 2011, 15:15–15:30, POT 251
Surfactant-mediated epitaxy of germanium layers on vicinal silicon substrates — •Jasper Ruhkopf1, Tobias F. Wietler1, Eddy P. Rugeramigabo1, Dominic Tetzlaff1, Jan Krügener2, Eberhard Bugiel1, and H. J. Osten1 — 1Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, 30167 Hannover — 2Information Technology Laboratory, Leibniz Universität Hannover, Schneiderberg 32, 30167 Hannover
Ge layers on vicinal Si wafers can be used as virtual substrates for GaAs growth. This provides the opportunity to combine the benefits of GaAs, needed for example for high-efficiency photovoltaic cells, with the advantages of silicon technology. The necessary strain relaxation of the Ge layers can be achieved by surfactant-mediated epitaxy (SME) employing Sb as surfactant. Ge layers were grown by SME on vicinal Si(001) substrates with different miscut angles. The surface reconstruction and step arrangement were analyzed in situ with electron diffraction methods. The dislocation pit density was examined by atomic force microscopy. The crystalline quality and the degree of strain relaxation were studied by high resolution X-ray diffraction (HRXRD). A small tensile strain was found which conformed well to calculations of the thermal stress induced in the cooling process.