Dresden 2011 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 19: Silicon and Germanium
HL 19.6: Talk
Monday, March 14, 2011, 15:45–16:00, POT 251
Extrinsic doping in silicon revisited — •Udo Schwingenschlögl1, Alexander Chroneos2, Cosima Schuster3, and Robin Grimes2 — 1PSE Division, KAUST, Thuwal 23955-6900, Kingdom of Saudi Arabia — 2Department of Materials, Imperial College London, London SW7 2BP, United Kingdom — 3Institut für Physik, Universität Augsburg, 86135 Augsburg, Germany
Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regard dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.
Reference: Appl. Phys. Lett. 96, 242107 (2010)