Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 19: Silicon and Germanium

HL 19.8: Talk

Monday, March 14, 2011, 16:30–16:45, POT 251

Kelvin probe force microscopy on doped semiconductor nanostructures with local, carrier-depleted space charge regions — •Christine Baumgart¹, Anne-Dorothea Müller², Falk Müller², Manfred Helm¹, and Heidemarie Schmidt¹ — ¹Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Institut für Ionenstrahlphysik und Materialforschung, P.O. Box 510119, 01314 Dresden — ²Anfatec Instruments AG, Melanchthonstr. 28, 08606 Oelsnitz

Failure analysis and optimization of semiconducting devices require knowledge of their electrical properties. Kelvin probe force microscopy (KPFM) is the most promising non-contact electrical nanometrology technique to meet the demands of today`s semiconductor industry. We present its applicability to locally doped silicon structures. Quantitative dopant profiling by means of KPFM measurements is successfully demonstrated on a conventional static random access memory (SRAM) cell and on cross-sectionally prepared Si epilayers by applying a recently introduced new explanation of the measured KPFM signal [1]. Additionally, the influence of local, carrier-depleted space charge regions and of the electric fields across them is discussed. It is explained how drift and diffusion of injected charge carriers in intrinsic electric fields influence the surface region of the investigated semiconductor and thus may disturb the detected KPFM bias.

[1] C. Baumgart, M. Helm, H. Schmidt, Phys. Rev. B 80, 085305 (2009).