Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 19: Silicon and Germanium

HL 19.9: Talk

Monday, March 14, 2011, 16:45–17:00, POT 251

New luminescence line at 1.09 eV in two stage deformed silicon — •Matthias Allardt, Sabine Kolodinski, Ellen Hieckmann, and Jörg Weber — Technische Universität Dresden, 01062 Dresden, Germany

This work focuses on photoluminescence (PL) and cathodoluminescence (CL) in Fz silicon, deformed in a two stage process: a low-stress uniaxial predeformation at 8 MPa @ 800 ^∘C and a subsequent high-stress deformation at 300 MPa @ 420 ^∘C. Slip lines on the sample surface show that two glide systems have been activated during the deformation process. A new spectral line at 1.09 eV could be observed both in the PL and CL investigations. A line shape analysis at different temperatures give evidence that this line originates from a free-to-bound transition with a trap binding energy of 80 meV. The nature of the luminescence center will be discussed. The work was funded under the SAB Project-Nr. 14255/2423.