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14:30 |
HL 19.1 |
Phase Separation and Size Controlled Nanocrystal Formation in GeO — •Christoph Sahle, Christian Sternemann, Alexander Nyrow, Alexander Schwamberger, Florian Wieland, Manuel Zschintzsch, Johannes Borany, Achim Hohl, and Metin Tolan
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14:45 |
HL 19.2 |
Structural modifications of low energy heavy ion irradiated Ge — •Tobias Steinbach, Jan Wernecke, and Werner Wesch
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15:00 |
HL 19.3 |
Structure characterization on selective Ge CVD-heteroepitaxy on free standing Si (001) nanopatterns — •Grzegorz Kozlowski, Peter Zaumseil, Yuji Yamamoto, Joachim Bauer, Bernd Tillack, and Thomas Schroeder
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15:15 |
HL 19.4 |
Surfactant-mediated epitaxy of germanium layers on vicinal silicon substrates — •Jasper Ruhkopf, Tobias F. Wietler, Eddy P. Rugeramigabo, Dominic Tetzlaff, Jan Krügener, Eberhard Bugiel, and H. J. Osten
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15:30 |
HL 19.5 |
Enhanced luminescence of self-assembled germanium islands in silicon photonic crystal nanocavities — •Stefan Lichtmannecker, Norman Hauke, Thomas Zabel, Fabrice Laussy, Dominique Bougeard, Gerhard Abstreiter, Yasuhiko Arakawa, and Jonathan Finley
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15:45 |
HL 19.6 |
Extrinsic doping in silicon revisited — •Udo Schwingenschlögl, Alexander Chroneos, Cosima Schuster, and Robin Grimes
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16:00 |
HL 19.7 |
In-situ incorporation and distribution of boron dopants in silicon nanowires — •Pratyush Das Kanungo, Xin Ou, Reinhard Koegler, Alexander Tonkikh, Wolfgang Skorupa, and Peter Werner
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16:30 |
HL 19.8 |
Kelvin probe force microscopy on doped semiconductor nanostructures with local, carrier-depleted space charge regions — •Christine Baumgart, Anne-Dorothea Müller, Falk Müller, Manfred Helm, and Heidemarie Schmidt
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16:45 |
HL 19.9 |
New luminescence line at 1.09 eV in two stage deformed silicon — •Matthias Allardt, Sabine Kolodinski, Ellen Hieckmann, and Jörg Weber
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17:00 |
HL 19.10 |
Raman scattering study of ro-vibrational modes of interstitial H2 in crystalline Si — •Sandro Koch, Edward Lavrov, and Jörg Weber
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17:15 |
HL 19.11 |
Thermally stimulated current in solid phase crystallized poly-Si thin films — •Markus Moser, Lars-Peter Scheller, and Norbert Nickel
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17:30 |
HL 19.12 |
Contact materials for sulphur hyperdoped black silicon — •Thomas Gimpel, Kay-Michael Günther, Anna Lena Baumann, Augustinas Ruibys, Stefan Kontermann, and Wolfgang Schade
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17:45 |
HL 19.13 |
Determination of the complex refractive index in the infrared region for femtosecond-laser-formed silicon surfaces using ray-tracing — •Augustinas Ruibys, Christian Lehmann, Thomas Gimpel, Anna Lena Baumann, Stefan Kontermann, and Wolfgang Schade
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