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HL: Fachverband Halbleiterphysik

HL 20: Innovative Materials

HL 20.3: Talk

Monday, March 14, 2011, 15:00–15:15, POT 06

Properties of annealed RF-sputtered Cu₂O thin films — •Daniel Reppin, Andreas Laufer, Angelika Polity, Detlev M. Hofmann, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen

Cuprous oxide is a p-type semiconductor with a band gap in the visible spectral range, it is sustainable, non-toxic and cheap in production and therefore an interesting material for photovoltaic applications.

Cu₂O thin films were sputtered from a copper and a Cu₂O composite target in a RF sputtering chamber under different oxygen flows. Afterwards the films were annealed under nitrogen flow in the range of 400 to 930 ^∘C for ten minutes. The effect of the annealing time was also investigated. Subsequently the optical and electrical properties of the annealed films were compared to the ’as-deposited’ films. After the annealing procedure the films sputtered from the Cu-target show a reduced carrier concentration by a factor of 100 (2.5· 10¹⁷ -> 2.5· 10¹⁵ cm⁻³) while the mobility increases from 0.37 to 35 cm²/Vs. The band gap of the films changed from 2.10 to 2.53 eV. These effects are related to a better crystalline quality and therefore a reduction of defects in the crystal structure of the Cu₂O. The results using the Cu₂O-target will be discussed at the conference.