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HL: Fachverband Halbleiterphysik
HL 23: Joint Focussed Session: Thin Film Chalcogenide Photovoltaics II
HL 23.2: Vortrag
Montag, 14. März 2011, 15:15–15:30, GER 37
Thin film solar cells based on the ternary compound Cu2SnS3 — •Dominik M. Berg, Phillip J. Dale, and Susanne Siebentritt — University of Luxembourg, Laboratory for Photovoltaics, 41 rue du Brill, L-4422 Belvaux, Luxembourg
Thin films of kesterite (Cu2ZnSn(S/Se)4) semiconductors are considered promising absorber layer materials for low cost thin film photovoltaic devices. Experimental and theoretical investigations show, however, that the existence region of a single phase kesterite is relatively small making it difficult to grow single phase absorbers. The semiconducting compound Cu2SnS3 is a common secondary phase that forms in Cu and Sn rich kesterite thin films during growth. Its appearance in a kesterite device would limit the VOC due to its smaller band gap. However, the band gap of about 1 eV, reported hole concentrations of 1018 cm−3, and an absorption coefficient in the visible region of 105 cm−1 make the Cu2SnS3 compound itself a promising candidate for low cost photovoltaic applications.
In this report we demonstrate the successful fabrication of a thin film solar cell based on Cu2SnS3 via a precursor annealing process. The precursor is prepared by low cost electrodeposition. A maximum external quantum efficiency of about 60% at 800 nm and a band gap of 1.0 eV could be measured. To the best of our knowledge, there have been no other reports on the fabrication of Cu2SnS3 based solar cell devices so far. Loss mechanisms and ways to increase efficiency will be discussed.