Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 25: Transport
HL 25.8: Talk
Monday, March 14, 2011, 17:45–18:00, POT 151
Field dependent transport properties and conductance fluctuations of InSb nanowires — •huijun yao1, h. yusuf günel1, christian blömers1, weis karl1, yennai wang2, jia grace lu2, detlev grützmacher1, and thomas schäpers1 — 1Institute of Bio-and Nanosystems (IBN1) and JARA-FIT Jülich-Aachen Research Alliance, Research Center Jülich GmbH, D-52425 Jülich, Germany — 2Department of Physics & Astronomy, University of Southern California, Los Angeles, California, 9008-0484, USA
Due to the precise structural control, semiconductor nanowires provide a new class of nanoscale building blocks for a broad range of disciplines like quantum optics, electronics, nanosensing, and biotechnology. In this respect, InSb- based nanowires are very promising candidates for applications in spintronics and spin-based quantum information technology, owing to the fact that bulk InSb has a high electron mobility, a strong spin-orbit coupling and a narrow band gap (0.16 eV) at room temperature. The measured InSb nanowires were synthesized by using a physical vapor transport method with gold nanoparticles as a catalyst. The basic transport parameters, e.g., conductivity, electron concentration, and mobility were determined by performing current-voltage and back-gate field-effect measurements in the temperature range from 4.2 to 300 K. Universal conductance fluctuations were studied systematically by performing magnetotransport measurements at temperature down to 0.3 K. From the root-mean square of the fluctuation amplitude and from the correlation field Bc information on the phase-coherence length was obtained.