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HL: Fachverband Halbleiterphysik
HL 30: Nano Wires: Growth and Characterization
HL 30.5: Vortrag
Dienstag, 15. März 2011, 11:15–11:30, FOE Anorg
Kelvin probe force microscopy on doping transitions in single semiconductor nanowires — •Sasa Vinaji1, Wolfgang Mertin1, Christoph Gutsche2, Andrey Lysov2, Ingo Regolin2, Werner Prost2, Franz-Josef Tegude2, and Gerd Bacher1 — 1Werkstoffe der Elektrotechnik & CeNIDE, Universität Duisburg-Essen, Bismarckstr. 81, 47057 Duisburg, Germany — 2Halbleitertechnologie & CeNIDE, Universität Duisburg-Essen, Lotharstr. 55, 47048 Duisburg, Germany
In order to realize innovative electronic and optoelectronic devices with semiconductor nanowires, controlled doping has to be achieved. Therefore detailed knowledge about the doping level and the local position of the doping transition is essential. This can be accessed by non-contact Kelvin Probe Force Microscopy (KPFM) without damaging the sensitive nanowire [1].
Single GaAs nanowires grown by metal-organic vapour phase epitaxy have been doped with Zn and Sn for p- and n-type doping, respectively, to create a doping transition in axial direction [2]. The nanowires show macroscopic diode-like IV-characteristics. With KPFM single nanowires have been analyzed, and a pn-junction has been localized inside the nanowires with a depletion zone of about 180 nm. Additionally, different biases have been applied and the variation of the depletion width has been investigated.
[1] S. Vinaji, et al., Nanotechnology 20, 385702 (2009), [2] I.Regolin, et al., J. Cryst. Growth (2010), doi:10.1016/j.jcrysgro.2010.08.028