HL 30: Nano Wires: Growth and Characterization
Tuesday, March 15, 2011, 10:15–11:45, FOE Anorg
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10:15 |
HL 30.1 |
Autocatalytic growth of GaAs nanowires on Si (111) using different SiOx templates — Daniel Rudolph, Simon Hertenberger, Xiaodong Wang, •Watcharapong Paosangthong, Max Bichler, Gerhard Abstreiter, Jonathan J. Finley, and Gregor Koblmüller
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10:30 |
HL 30.2 |
MBE growth of axial AlGaAs/GaAs heterostructure nanowires — •Torsten Rieger, Mihail Ion Lepsa, Thomas Schäpers, Hans Lüth, and Detlev Grützmacher
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10:45 |
HL 30.3 |
Doping dependence of the electrochemical properties of GaN:Si nanowires. — •Jens Wallys, Florian Furtmayr, Rudolph Matz, Marcus Rohnke, and Martin Eickhoff
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11:00 |
HL 30.4 |
Effects of doping profile on the optoelectronic properties of GaN nanowires — •Friederich Limbach, Tobias Gotschke, Toma Stoica, Carsten Pfüller, Oliver Brandt, Achim Trampert, Sebastian Geburt, Carsten Ronning, and Raffaella Calarco
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11:15 |
HL 30.5 |
Kelvin probe force microscopy on doping transitions in single semiconductor nanowires — •Sasa Vinaji, Wolfgang Mertin, Christoph Gutsche, Andrey Lysov, Ingo Regolin, Werner Prost, Franz-Josef Tegude, and Gerd Bacher
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11:30 |
HL 30.6 |
Microstructures and electronic properties of one-dimensional ZnO nanostructures — •Peter Heß, Yong Lei, Martin Peterlechner, and Gerhard Wilde
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