Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 31: III-V-Compounds: Nitrides
HL 31.10: Vortrag
Dienstag, 15. März 2011, 12:45–13:00, POT 51
Carbon doped InAlAs/InGaAs/InAs heterostructures — •Marika Hirmer1, Dominique Bougeard1, Dieter Schuh1, and Werner Wegscheider2 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D 93040 Regensburg, Germany — 2Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich, Switzerland
InAlAs/InGaAs heterostructures with a high In content are promising candidates for spintronic applications such as spin-valve mesoscopic devices due to their large Landé g-factor (around 15 in InAs) and the large Rashba effect.
Here, we present results on carbon doped InGaAs/InAlAs heterostructures with embedded InAs channel. We got a two-dimensional hole gas with a hole density of p = 1.06*1012 cm−2 and a hole mobility of 7.26*103 cm2/Vs. Magnetotransport measurements on L-shaped Hall bars along [011], [01-1], [010] and [001] crystal directions exhibit well-developed Shubnikov-de-Haas oscillations and quantum Hall plateaus, indicating the high quality of the material. In the field range from minus 6T to 6T the longitudinal resistance is superimposed with a negative parabolic magnetoresistance background. The minimum of the longitudinal resistance at B = 0T decreases with increasing temperature, and hence, is a sign for weak antilocalization.