Dresden 2011 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 31: III-V-Compounds: Nitrides
HL 31.12: Vortrag
Dienstag, 15. März 2011, 13:15–13:30, POT 51
Electrical characterization of ion implanted AlN on sapphire — •Niels Henrik Borth, Ulrich Vetter, Tristan Koppe, Marc Brötzmann, Hans-Gregor Gehrke, Kun Zhang, and Hans Hofsäss — II. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany
AlN with its large bandgap of 6.2 eV is a promising candidate for application in high power high frequency devices, UV detectors and UV light emitters. Despite the fact that there are a large number of publications concerning the optical activation of dopants in AlN, no attempt was made to achieve electrical activation after ion implantation. In this study we report on the electrical behaviour of ion implanted AlN on sapphire. Silicon, magnesium and fluorine were implanted with several energies forming a boxlike profile. The samples were annealed in a RTP furnace. SIMS measurements were used to investigate the implantation profile before and after the annealing process. Before evaporating contacts the surface was etched by RIE using a Cl2/BCl3 plasma. The peak concentrations ranged from 0.05 at% up to 1 at%. Results of the electrical measurements as a function of doping concentration are presented. Additionally sputter and RIE experiments were performed for different fluences and times, respectively. AFM measurements illustrate a smoothening of the surface.