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HL: Fachverband Halbleiterphysik

HL 31: III-V-Compounds: Nitrides

HL 31.2: Vortrag

Dienstag, 15. März 2011, 10:30–10:45, POT 51

Growth and characterization of InN by RF MBE — •Andreas Kraus, Ernst Ronald Buß, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter — Technische Universität Braunschweig, Institute of Applied Physics, Mendelssohnstraße 2, 38106 Braunschweig

InN layers were grown on GaN templates by radio frequency molecular beam epitaxy. After a low temperature nucleation layer InN was grown at different substrate temperatures and indium and nitrogen fluxes. With the intention to improve the quality of these thin films the In flux was pulsed by opening and closing the In shutter periodically. A set of samples was grown in this way by varying the In flux, the substrate temperature and the shutter frequency. The growth was monitored in-situ by reflection high energy electron diffraction and by optical reflectometry. The latter shows intensity oscillations following the shutter sequence allowing us to study the growth kinetics of InN on GaN templates.

Comparing both growth methods, the samples grown with a pulsed In flux exhibit improved structural quality in terms of XRD rocking widths and surface roughnesses measured by atomic force microscopy. Furthermore the samples exhibit no significant strain indicating that they are fully relaxed even at thicknesses of approximately 15 nm.