Dresden 2011 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 31: III-V-Compounds: Nitrides
HL 31.4: Talk
Tuesday, March 15, 2011, 11:00–11:15, POT 51
Surface polarity determination of polar and semi-polar InN — •Daria Skuridina1, Duc Dinh1, Michael Kneissl1, Norbert Esser1,2, and Patrick Vogt1 — 1TU Berlin, Institute of Solid State Physics, Hardenbergstr. 36, 10623 Berlin, Germany. — 2ISAS Berlin, Albert-Einstein-Str.9, 12489 Berlin, Germany
Over recent years InN has attracted much attention because of its possible applications in electronic devices. However, the growth of high quality InN films still remains a problem. Particularly, the understanding of the structure formation at InN surfaces and the dependency on the InN polarity are still insufficient. In our experiments we have performed X-ray photoelectron spectroscopy (XPS) measurements of the valence band structure of the polar and semi-polar (11-22) InN grown by MOVPE. From the analysis of the peak correlation in the valence band spectra we could determine the polarity of c-plane InN films with thicknesses even below 100 nm. Our measurements confirm that the polarity of the InN films depends strongly on the nitridation of the sapphire substrate before InN growth. Semi-polar (11-22) InN exhibits columnar surface structure along the c-direction at the angle of 58° with respect to the surface normal. The valence band spectra revealed an In polarity of these surfaces which indicates a [0001] growth direction of the columns on semi-polar InN surface.