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HL: Fachverband Halbleiterphysik

HL 31: III-V-Compounds: Nitrides

HL 31.5: Vortrag

Dienstag, 15. März 2011, 11:15–11:30, POT 51

Time-resolved photoluminescence in GaNAsP heterostructures grown on silicon — •Nektarios Koukourakis¹, Dominic Funke¹, Nils C. Gerhardt¹, Martin R. Hofmann¹, Sven Liebich², Steffen Zinnkann², Martin Zimprich², Kerstin Volz², Wolfgang Stolz², and Bernardette Kunert³ — ¹Photonics and Terahertztechnology, Ruhr-Universität Bochum, Bochum, Germany — ²Material Science Center and Faculty of Physics, Philipps-University Marburg, Marburg, Germany — ³NAsP III/V GmbH, Marburg, Germany

The new direct band-gap dilute nitride material Ga(NAsP) is a very promising candidate for the realisation of optoelectronic integrated circuits (OEICs) as it can be grown lattice matched on silicon. Electrically pumped lasing of Ga(NAsP) on GaP has already been demonstrated, showing the high quality of the material. Samples grown on silicon have already shown high gain values, comparable to common high-quality laser materials. In this talk we present time-resolved photoluminescence studies of the Ga(NAsP) direct band gap material system grown on (001) Si-substrates. We compare the carrier dynamics of several samples that differ in growth parameters and material compositions to study the radiative and non-radiative recombination mechanisms.