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Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 31: III-V-Compounds: Nitrides

Tuesday, March 15, 2011, 10:15–13:30, POT 51

10:15 HL 31.1 Direct measurement of the band gap and Fermi level position at InN(1120) — •Philipp Ebert, Sarah Schaafhausen, Andrea Lenz, Aizhan Sabitova, Lena Ivanova, Mario Dähne, Yu-Liang Hong, Shangjr Gwo, and Holger Eisele
10:30 HL 31.2 Growth and characterization of InN by RF MBE — •Andreas Kraus, Ernst Ronald Buß, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
10:45 HL 31.3 Optical gain in GaNAsP heterostructures pseudomorphically grown on siliconNektarios Koukourakis, Dominic Funke, Nils C. Gerhardt, Martin R. Hofmann, Sven Liebich, Christina Bückers, Steffen Zinnkann, Martin Zimprich, Kerstin Volz, •Stefan W. Koch, Wolfgang Stolz, and Bernardette Kunert
11:00 HL 31.4 Surface polarity determination of polar and semi-polar InN — •Daria Skuridina, Duc Dinh, Michael Kneissl, Norbert Esser, and Patrick Vogt
11:15 HL 31.5 Time-resolved photoluminescence in GaNAsP heterostructures grown on silicon — •Nektarios Koukourakis, Dominic Funke, Nils C. Gerhardt, Martin R. Hofmann, Sven Liebich, Steffen Zinnkann, Martin Zimprich, Kerstin Volz, Wolfgang Stolz, and Bernardette Kunert
11:30 HL 31.6 Optical properties of quaternary AlInGaN alloys pseudomorphically grown on GaN — •Egidijus Sakalauskas, Benjamin Reuters, Lars R. Khoshroo, Holger Kalisch, Michael Heuken, Rolf H. Jansen, Andrei Vescan, Gerhard Gobsch, and Rüdiger Goldhahn
12:00 HL 31.7 MOVPE von semipolarem AlGaN auf (1010) m-plane Saphir — •Frank Mehnke, Joachim Stellmach, Martin Frentrup, Gunnar Kusch, Tim Wernicke, Markus Pristovsek und Michael Kneissl
12:15 HL 31.8 Investigation of the influence from TMIn for the optical properties of MOCVD grown InN — •Stefan Mohn, Ronny Kirste, Gordon Callsen, Öcal Tuna, Michael Heuken, and Axel Hoffmann
12:30 HL 31.9 Growth of AlN on c-plane sapphire by pulsed MOVPE — •Hanno Kröncke, Stephan Figge, and Detlef Hommel
12:45 HL 31.10 Carbon doped InAlAs/InGaAs/InAs heterostructures — •Marika Hirmer, Dominique Bougeard, Dieter Schuh, and Werner Wegscheider
13:00 HL 31.11 Point defects in AlN — •Jan E. Stehr, Detlev M. Hofmann, Bruno K. Meyer, and Matthias Bickermann
13:15 HL 31.12 Electrical characterization of ion implanted AlN on sapphire — •Niels Henrik Borth, Ulrich Vetter, Tristan Koppe, Marc Brötzmann, Hans-Gregor Gehrke, Kun Zhang, and Hans Hofsäss
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