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10:15 |
HL 31.1 |
Direct measurement of the band gap and Fermi level position at InN(1120) — •Philipp Ebert, Sarah Schaafhausen, Andrea Lenz, Aizhan Sabitova, Lena Ivanova, Mario Dähne, Yu-Liang Hong, Shangjr Gwo, and Holger Eisele
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10:30 |
HL 31.2 |
Growth and characterization of InN by RF MBE — •Andreas Kraus, Ernst Ronald Buß, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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10:45 |
HL 31.3 |
Optical gain in GaNAsP heterostructures pseudomorphically grown on silicon — Nektarios Koukourakis, Dominic Funke, Nils C. Gerhardt, Martin R. Hofmann, Sven Liebich, Christina Bückers, Steffen Zinnkann, Martin Zimprich, Kerstin Volz, •Stefan W. Koch, Wolfgang Stolz, and Bernardette Kunert
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11:00 |
HL 31.4 |
Surface polarity determination of polar and semi-polar InN — •Daria Skuridina, Duc Dinh, Michael Kneissl, Norbert Esser, and Patrick Vogt
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11:15 |
HL 31.5 |
Time-resolved photoluminescence in GaNAsP heterostructures grown on silicon — •Nektarios Koukourakis, Dominic Funke, Nils C. Gerhardt, Martin R. Hofmann, Sven Liebich, Steffen Zinnkann, Martin Zimprich, Kerstin Volz, Wolfgang Stolz, and Bernardette Kunert
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11:30 |
HL 31.6 |
Optical properties of quaternary AlInGaN alloys pseudomorphically grown on GaN — •Egidijus Sakalauskas, Benjamin Reuters, Lars R. Khoshroo, Holger Kalisch, Michael Heuken, Rolf H. Jansen, Andrei Vescan, Gerhard Gobsch, and Rüdiger Goldhahn
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12:00 |
HL 31.7 |
MOVPE von semipolarem AlGaN auf (1010) m-plane Saphir — •Frank Mehnke, Joachim Stellmach, Martin Frentrup, Gunnar Kusch, Tim Wernicke, Markus Pristovsek und Michael Kneissl
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12:15 |
HL 31.8 |
Investigation of the influence from TMIn for the optical properties of MOCVD grown InN — •Stefan Mohn, Ronny Kirste, Gordon Callsen, Öcal Tuna, Michael Heuken, and Axel Hoffmann
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12:30 |
HL 31.9 |
Growth of AlN on c-plane sapphire by pulsed MOVPE — •Hanno Kröncke, Stephan Figge, and Detlef Hommel
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12:45 |
HL 31.10 |
Carbon doped InAlAs/InGaAs/InAs heterostructures — •Marika Hirmer, Dominique Bougeard, Dieter Schuh, and Werner Wegscheider
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13:00 |
HL 31.11 |
Point defects in AlN — •Jan E. Stehr, Detlev M. Hofmann, Bruno K. Meyer, and Matthias Bickermann
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13:15 |
HL 31.12 |
Electrical characterization of ion implanted AlN on sapphire — •Niels Henrik Borth, Ulrich Vetter, Tristan Koppe, Marc Brötzmann, Hans-Gregor Gehrke, Kun Zhang, and Hans Hofsäss
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