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HL: Fachverband Halbleiterphysik
HL 33: Spin-dependent Transport I
HL 33.11: Talk
Tuesday, March 15, 2011, 13:00–13:15, POT 251
Coherent electrical spin-manipulation in strained InGaAs — •Sebastian Kuhlen1,3, Klaus Schmalbuch1,3, Markus Hagedorn1,3, Mihail Lepsa2,3, Thomas Schäpers2,3, Gernot Güntherodt1,3, and Bernd Beschoten1,3 — 1II. Physikalisches Institut A, RWTH Aachen University, 52074 Aachen — 2Institut für Bio- und Nanosysteme IBN-1, Forschungszentrum Jülich, 52425 Jülich — 3JARA: Fundamentals of Future Information Technology, 52074 Aachen
To realize novel spintronic devices it is important to develop electrical methods both to polarize and to manipulate electron spins.
We have investigated the process of so-called current-induced spin polarization in strained n-InGaAs epilayers, which favorably does not require any ferromagnetic electrodes. An electric field is found to create a Dresselhaus-type internal magnetic field, which is perpendicular and proportional to the E-field (100 mT per 4·104 V/m). Using electric field pulses, which convert into internal magnetic field pulses, we are able to trigger the phase of the electron spin polarization. The coherence of these spins is probed by spin precession using time-resolved Faraday rotation. Moreover, the internal field pulses can be used to turn on and turn off spin precession of optically pumped coherent spin ensembles in the absence of external magnetic fields. By changing pulse width and amplitude we achieve a full 360∘ control of the spin direction.
This work has been supported by DFG through FOR912.