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HL: Fachverband Halbleiterphysik

HL 36: Joint Focussed Session: Transparent Conductive Oxides II

HL 36.2: Topical Talk

Dienstag, 15. März 2011, 11:45–12:15, WIL B122

Transparent Electronics Using Oxide Materials — •Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II

We discuss all-oxide transparent electronic devices, such as diodes, photodiodes, transistors and inverters, based on rectifying, transparent Schottky contacts from metal oxides, transparent semiconducting oxides and transparent substrates. In particular, MESFET devices are presented with crystalline and amorphous oxides as channel, exhibiting low operation voltage and voltage swing. Inverters built from such transistors exhibit high gain (>200). Directions of further research will be discussed.