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HL: Fachverband Halbleiterphysik

HL 36: Joint Focussed Session: Transparent Conductive Oxides II

HL 36.5: Vortrag

Dienstag, 15. März 2011, 13:00–13:15, WIL B122

Growth and characterization of In₂O₃ single crystals — •Valentina Scherer, Peter Hlawenka, Christoph Janowitz, Alica Krapf, Helmut Dwelk, and Recardo Manzke — Institut für Physik, Humboldt-Universität zu Berlin

The scientific interest in transparent conducting oxides (TCOs) such as ZnO, Ga₂O₃, In₂O₃ and SnO₂ increases significantly. However, information on the electronic structure and the doping behaviour is very scarce. This is in part due to the challenging problem of growing high purity single crystals and substrates for homoepitaxy, which also limits the attainable progress in device production. High quality In₂O₃ single crystals were grown using the chemical vapor transport method (CVT). The crystals were of body centered cubic bixbyite-type structure with a lattice parameter a=10.12Å. The temperature-dependent resistivity, Hall-constant, and mobility were measured and an electron density in the range of ∼10¹⁹ cm⁻³ was determined. The crystals were then investigated using high resolution photoemission and transport measurements. Emission from the valence band and the partially filled conduction band at the Γ-point yielded a direct band gap of ∼3 eV. The weak conduction band emission near the Fermi edge enabled a Fermi-map and the determination of the Fermi surface. The obtained results are in good agreement with theoretical band structure calculations and with the previously experimental results of the thin films.