Dresden 2011 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 38: Polaritons and Polariton Lasing

HL 38.1: Talk

Tuesday, March 15, 2011, 12:00–12:15, FOE Anorg

Non-polar III-nitride microcavities for polariton lasing — •Georg Rossbach¹, Jacques Levrat¹, Amélie Dussaigne¹, Henryk Teisseyre², Gatien Cosendey¹, Marlene Glauser¹, Munise Cobet¹, Izabella Grzegory², Raphaël Butté¹, Tadeusz Suski², and Nicolas Grandjean¹ — ¹ICMP, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland — ²Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland

Owing to their ultra-low effective mass and bosonic character, exciton-polaritons are promising candidates for a significant reduction of the threshold of electrically driven semiconductor coherent light emitters. In this context polariton lasing at room temperature has been demonstrated recently in III-nitride (MCs) under optical pumping. However, due to the hexagonal symmetry of III-nitrides, heterostructures grown along polar orientation suffer from the presence of the quantum-confined Stark-effect. The latter reduces the oscillator strength and the exciton binding energy in wide quantum wells, which can potentially prevent the formation of polaritons. In order to circumvent these effects the growth of non-polar orientations looks well suited even though the achievement of high crystal quality is challenging.

Here, we present first results obtained on a non-polar III-nitride MC grown by molecular beam epitaxy on m-plane bulk GaN. Photoluminescence and reflectivity studies were carried out (in the temperature range 4 - 300 K) showing linear and non-linear effects in the strong light-matter coupling regime combined with a pronounced optical anisotropy as expected from selection rules.