Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 38: Polaritons and Polariton Lasing
HL 38.3: Vortrag
Dienstag, 15. März 2011, 12:30–12:45, FOE Anorg
Distinguishing photon and polariton lasing from GaAs microcavities by spectral and temporal analysis of the two-threshold behavior — •Lars Erik Kreilkamp1, Jean-Sebastian Tempel1, Franziska Veit1, Marc Aßmann1, Arash Rahimi-Iman2, Andreas Löffler2, Sven Höfling2, Stephan Reitzenstein2, Lukas Worschech2, Alfred Forchel2, and Manfred Bayer1 — 1Experimentelle Physik 2, Technische Universität Dortmund, D-44221 Dortmund, Germany — 2Technische Physik, Physikalisches Institut, Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Universität Würzburg, D-97074 Würzburg, Germany
We present the excitation-power dependent evolution of the emission of a planar GaAs/GaAlAs microcavity from thermal polariton photoluminescence to polariton lasing and to photon lasing. For the emission from the lower energy-momentum dispersion branch we find a two-threshold behavior of the ground state in the input-output curve where each transition is accompanied by characteristic changes of the in-plane mode dispersion. By studying the second-order correlation function g(2)(τ) of the emission, using a streak camera set-up with appropriate time resolution, we show in particular, that the thresholds are unambiguously reflected in the photon statistics. Moreover, the evolution of the emission pulse duration confirms the occurence of two distinct transitions.