Dresden 2011 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 4: Carbon: Diamond, Nanotubes, and Graphene
HL 4.6: Vortrag
Montag, 14. März 2011, 11:30–11:45, POT 251
Dielectrophoretic assembly of field-effect transistors using sorted semiconducting carbon nanotubes — •Juliane Posseckardt1, Yann Battie2, Romain Fleurier2, and Michael Mertig1 — 1TU Dresden, Professur für Physikalische Chemie, Mess- und Sensortechnik, 01062 Dresden, Germany — 2LEM UMR 104 Onera-CNRS 92322 Châtillon, France
We report on the direct assembly of single-walled carbon nanotube field-effect transistors (SWCNT-FETs) by dielectrophoresis using highly enriched semiconducting carbon nanotubes.
The SWCNTs have been sorted using an improved separation technique by density gradient ultracentrifugation made in two steps. The sorted SWCNTs have been characterized by Raman and UV-vis-IR spectroscopy.
The out-of-solution guided assembly from sorted semiconducting fraction is superior in comparison to conventional assembly from unsorted fractions because of the missing necessity to break down purely metallic current bridges. By this, transistors with a high ON/OFF ratio can be produced in one step.