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HL: Fachverband Halbleiterphysik

HL 43: Spin-dependent Transport II

HL 43.1: Vortrag

Dienstag, 15. März 2011, 14:30–14:45, POT 251

Electrical Spin injection into Zinc Oxide — •Christoph Schwark^1,3, Christian Weyer^1,3, Gernot Güntherodt^1,3, Matthias Althammer², Sebastian T.B. Goennenwein², Matthias Opel², Rudolf Gross², and Bernd Beschoten^1,3 — ¹II. Physikalisches Institut A, RWTH Aachen University, Aachen, Germany — ²Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Garching, Germany — ³JARA - Fundamentals of Future Information Technology, Aachen, Germany

We have investigated the feasibility of electrically injecting spin-polarized carriers into ZnO. For this purpose we have used Co/n-ZnO heterostructures deposited on sapphire substrates by pulsed laser deposition. Electrical spin injection was demonstrated at 10 K by optical means using Kerr rotation measurements in Hanlé geometry. Spin injection can be observed up to a temperature of 35 K with a temperature independent spin dephasing time of 1 ns, which has been determined from the width of the Hanlé curves.

Financial support by DFG through SPP 1285 is gratefully acknowledged.