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HL: Fachverband Halbleiterphysik

HL 43: Spin-dependent Transport II

HL 43.2: Vortrag

Dienstag, 15. März 2011, 14:45–15:00, POT 251

Doping density dependence of electron spin relaxation in bulk wurtzite GaN — •Jan Heye Buß, Jörg Rudolph, Sebastian Starosielec, and Daniel Hägele — AG Spektroskopie der kondensierten Materie, Ruhr-Universität Bochum, Bochum, Germany

GaN is a prototypical wide-gap semiconductor with wurtzite structure. Nevertheless, the spin relaxation for moderate to very high doping densities has not been investigated so far. We measure the doping density dependence of electron spin relaxation in 11 different n-type bulk wurtzite GaN samples by time-resolved Kerr-rotation measurements up to a density of 1.5 × 10¹⁹ cm⁻³. The spin relaxation time shows a non-monotonic dependence on doping density, with a decrease of the spin lifetime for increasing doping density in the highly degenerate regime. The decrease in spin lifetimes is much less dramatic than the decrease known from zincblende semiconductors. We present an analytical expression for the density-dependent spin relaxation tensor in wurtzite semiconductors based on Dyakonov-Perel theory in the degenerate regime that shows good agreement with the experiment.